Semiconductor division Samsung Foundry na faʻailoa mai ua amata le gaosiga o 3nm chips i lona fale gaosimea i Hwasong. E le pei o le augatupulaga talu ai, lea na faʻaogaina ai le tekinolosi FinFet, o loʻo faʻaaogaina nei e le Korea sauai le GAA (Gate-All-Around) faʻataʻitaʻiga transistor, lea e faʻateleina ai le malosi o le malosi.
3nm chips ma MBCFET (Multi-Bridge-Channel) GAA architecture o le a maua ai le maualuga o le malosi o le malosi, faatasi ai ma isi mea, e ala i le faʻaitiitia o le voltage tuʻuina atu. E fa'aogaina fo'i e Samsung le nanoplate transistors i tupe meataalo semiconductor mo chipsets telefoni feavea'i maualuga.
Atagalerie
Pe a faatusatusa i tekinolosi nanowire, o nanoplates ma auala lautele e mafai ai ona maualuga le faatinoga ma sili atu le lelei. E ala i le fetuutuunai o le lautele o nanoplates, e mafai e tagata Samsung ona faʻafetaui le faʻatinoga ma le faʻaaogaina o le eletise i o latou manaʻoga.
E mafai ona e fiafia i ai
Pe a faʻatusatusa i le 5nm chips, e tusa ai ma Samsung, o mea fou e 23% maualuga le faʻatinoga, 45% maualalo le faʻaaogaina o le malosi ma 16% laʻititi laʻititi. O le latou 2nd tupulaga e tatau ona ofoina atu le 30% sili atu le faʻatinoga, 50% maualuga le lelei ma le 35% laʻititi laʻititi.
"Ua televave le tuputupu aʻe o Samsung aʻo faʻaauau pea ona faʻaalia le taʻitaʻiga i le faʻaogaina o tekinolosi e sosoo ai i le gaosiga. Matou te faʻamoemoe e faʻaauau lenei taʻitaʻiga i le faʻagasologa muamua 3nm faʻatasi ma le fausaga MBCFETTM. O le a faʻaauau pea ona matou faʻamalosia le faʻafouina i atinaʻe faʻatekonolosi faʻatauvaʻa ma fatuina faiga e fesoasoani e faʻavavevave ai le ausiaina o tekinolosi matua." o le tala lea a Siyoung Choi, o le ulu o le pisinisi semiconductor a Samsung.
